DMN1016UCB6-7 Diodes Incorporated

Description: MOSFET N-CH 12V 5.5A U-WLB1510-6, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 920mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-WLB1510-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V.