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DMN1016UCB6-7

DMN1016UCB6-7 Diodes Incorporated


Hersteller: Diodes Incorporated
MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
auf Bestellung 849 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.17 EUR
10+1.02 EUR
100+0.76 EUR
500+0.59 EUR
Mindestbestellmenge: 3
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Technische Details DMN1016UCB6-7 Diodes Incorporated

Description: MOSFET N-CH 12V 5.5A U-WLB1510-6, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 920mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-WLB1510-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V.

Weitere Produktangebote DMN1016UCB6-7 nach Preis ab 0.43 EUR bis 1.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN1016UCB6-7 DMN1016UCB6-7 Hersteller : Diodes Incorporated Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
auf Bestellung 3471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMN1016UCB6-7 DMN1016UCB6-7 Hersteller : Diodes Incorporated Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
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Im Einkaufswagen  Stück im Wert von  UAH