| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.39 EUR |
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Technische Details DMN1017UCP3-7 Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V, Power Dissipation (Max): 1.47W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X3-DSN1010-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V.
Weitere Produktangebote DMN1017UCP3-7 nach Preis ab 0.32 EUR bis 1.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1017UCP3-7 | Diodes Zetex |
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R |
auf Bestellung 183000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| DMN1017UCP3-7 | Diodes Zetex |
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| DMN1017UCP3-7 | Diodes Zetex |
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| DMN1017UCP3-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V Power Dissipation (Max): 1.47W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X3-DSN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| DMN1017UCP3-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V Power Dissipation (Max): 1.47W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X3-DSN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V |
auf Bestellung 186608 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN1017UCP3-7 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
auf Bestellung 183000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| DMN1017UCP3-7 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.35 EUR |
| DMN1017UCP3-7 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.35 EUR |
| DMN1017UCP3-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.44 EUR |
| 9000+ | 0.38 EUR |
| DMN1017UCP3-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
auf Bestellung 186608 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 19+ | 1.13 EUR |
| 25+ | 0.95 EUR |
| 50+ | 0.83 EUR |
| 100+ | 0.74 EUR |


