DMN1017UCP3-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.30 EUR |
| 15000+ | 0.28 EUR |
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Technische Details DMN1017UCP3-7 Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V, Power Dissipation (Max): 1.47W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X3-DSN1010-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V.
Weitere Produktangebote DMN1017UCP3-7 nach Preis ab 0.32 EUR bis 1.41 EUR
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| DMN1017UCP3-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFETBVDSS: 8V-24V |
auf Bestellung 2866 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1017UCP3-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V Power Dissipation (Max): 1.47W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X3-DSN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V |
auf Bestellung 650477 Stücke: Lieferzeit 10-14 Tag (e) |
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