DMN1019USN-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 9.3A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 680mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
| 15000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN1019USN-7 Diodes Incorporated
Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.01 ohm, SC-59, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 9.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 800mV, euEccn: NLR, Verlustleistung: 680mW, Bauform - Transistor: SC-59, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.01ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMN1019USN-7 nach Preis ab 0.16 EUR bis 0.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN1019USN-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 9.3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V |
auf Bestellung 19681 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
DMN1019USN-7 | DIODES INC. |
Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.01 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| DMN1019USN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 12V; 9.3A; 1.2W; SC59; SMT Technology: MOSFET Mounting: SMD Case: SC59 Gate-source voltage: 8V Drain-source voltage: 12V Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Electrical mounting: SMT Gate charge: 50.6nC On-state resistance: 10mΩ Power dissipation: 1.2W Drain current: 9.3A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| DMN1019USN-7 | Diodes |
MOSFET N-CH 12V 9.3A SC-59 Транзистори |
auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DMN1019USN-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 9.3A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 680mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
Description: MOSFET N-CH 12V 9.3A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 680mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
auf Bestellung 19681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| DMN1019USN-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.01 ohm, SC-59, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 800mV
euEccn: NLR
Verlustleistung: 680mW
Bauform - Transistor: SC-59
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.01 ohm, SC-59, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 800mV
euEccn: NLR
Verlustleistung: 680mW
Bauform - Transistor: SC-59
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| DMN1019USN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 12V; 9.3A; 1.2W; SC59; SMT
Technology: MOSFET
Mounting: SMD
Case: SC59
Gate-source voltage: 8V
Drain-source voltage: 12V
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 50.6nC
On-state resistance: 10mΩ
Power dissipation: 1.2W
Drain current: 9.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 12V; 9.3A; 1.2W; SC59; SMT
Technology: MOSFET
Mounting: SMD
Case: SC59
Gate-source voltage: 8V
Drain-source voltage: 12V
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 50.6nC
On-state resistance: 10mΩ
Power dissipation: 1.2W
Drain current: 9.3A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| DMN1019USN-7 |
|
Hersteller: Diodes
MOSFET N-CH 12V 9.3A SC-59 Транзистори
MOSFET N-CH 12V 9.3A SC-59 Транзистори
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 0.38 EUR |