DMN1025UFDB-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2558 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 260+ | 0.28 EUR |
| 315+ | 0.23 EUR |
| 350+ | 0.20 EUR |
| 506+ | 0.14 EUR |
| 538+ | 0.13 EUR |
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Technische Details DMN1025UFDB-7 DIODES INCORPORATED
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Drain-source voltage: 12V, Drain current: 5.5A, On-state resistance: 38mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 1.7W, Polarisation: unipolar, Kind of package: 7 inch reel; tape, Gate charge: 23.1nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: 35A, Mounting: SMD, Case: U-DFN2020-6, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN1025UFDB-7 nach Preis ab 0.13 EUR bis 0.65 EUR
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DMN1025UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Drain-source voltage: 12V Drain current: 5.5A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 23.1nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 |
auf Bestellung 2558 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1025UFDB-7 | Hersteller : Diodes Incorporated | MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W |
auf Bestellung 1968 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1025UFDB-7 | Hersteller : Diodes Inc |
 Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |