DMN1025UFDB-7 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.63 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
| 24000+ | 0.26 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN1025UFDB-7 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 12V, Drain current: 5.5A, Power dissipation: 1.7W, Case: U-DFN2020-6, Gate-source voltage: ±10V, On-state resistance: 38mΩ, Mounting: SMD, Kind of package: 7 inch reel; tape, Kind of channel: enhancement, Pulsed drain current: 35A, Gate charge: 23.1nC.
Weitere Produktangebote DMN1025UFDB-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DMN1025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.5A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 23.1nC |
auf Bestellung 1533 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN1025UFDB-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.5A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 23.1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.5A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 23.1nC
auf Bestellung 1533 Stücke:
Lieferzeit 14-21 Tag (e)