DMN1025UFDB-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 23.1nC
On-state resistance: 38mΩ
Power dissipation: 1.7W
Drain current: 5.5A
Gate-source voltage: ±10V
Drain-source voltage: 12V
Pulsed drain current: 35A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 23.1nC
On-state resistance: 38mΩ
Power dissipation: 1.7W
Drain current: 5.5A
Gate-source voltage: ±10V
Drain-source voltage: 12V
Pulsed drain current: 35A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 309+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 527+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
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Technische Details DMN1025UFDB-7 DIODES INCORPORATED
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Mounting: SMD, Type of transistor: N-MOSFET x2, Case: U-DFN2020-6, Polarisation: unipolar, Gate charge: 23.1nC, On-state resistance: 38mΩ, Power dissipation: 1.7W, Drain current: 5.5A, Gate-source voltage: ±10V, Drain-source voltage: 12V, Pulsed drain current: 35A, Kind of package: 7 inch reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN1025UFDB-7 nach Preis ab 0.12 EUR bis 0.82 EUR
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DMN1025UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Mounting: SMD Type of transistor: N-MOSFET x2 Case: U-DFN2020-6 Polarisation: unipolar Gate charge: 23.1nC On-state resistance: 38mΩ Power dissipation: 1.7W Drain current: 5.5A Gate-source voltage: ±10V Drain-source voltage: 12V Pulsed drain current: 35A Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1025UFDB-7 | Hersteller : Diodes Incorporated | MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W |
auf Bestellung 5116 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1025UFDB-7 | Hersteller : Diodes Inc |
 Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |