DMN1025UFDB-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 38mΩ
Pulsed drain current: 35A
Gate charge: 23.1nC
Drain current: 5.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Gate-source voltage: ±10V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 309+ | 0.27 EUR |
| 374+ | 0.23 EUR |
| 414+ | 0.2 EUR |
| 550+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
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Technische Details DMN1025UFDB-7 DIODES INCORPORATED
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.7W, Case: U-DFN2020-6, Mounting: SMD, Kind of package: 7 inch reel; tape, On-state resistance: 38mΩ, Pulsed drain current: 35A, Gate charge: 23.1nC, Drain current: 5.5A, Kind of channel: enhancement, Drain-source voltage: 12V, Gate-source voltage: ±10V.
Weitere Produktangebote DMN1025UFDB-7 nach Preis ab 0.33 EUR bis 2.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN1025UFDB-7 | Diodes Incorporated |
 MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W |
auf Bestellung 2008 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1025UFDB-7 |
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Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W
MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.37 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.37 EUR |
| 6000+ | 0.33 EUR |