DMN1025UFDB-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Drain current: 5.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 38mΩ
Pulsed drain current: 35A
Power dissipation: 1.7W
Gate charge: 23.1nC
Polarisation: unipolar
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 309+ | 0.27 EUR |
| 374+ | 0.23 EUR |
| 414+ | 0.2 EUR |
| 550+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN1025UFDB-7 DIODES INCORPORATED
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Mounting: SMD, Drain current: 5.5A, Kind of channel: enhancement, Drain-source voltage: 12V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±10V, Kind of package: 7 inch reel; tape, Case: U-DFN2020-6, On-state resistance: 38mΩ, Pulsed drain current: 35A, Power dissipation: 1.7W, Gate charge: 23.1nC, Polarisation: unipolar.
Weitere Produktangebote DMN1025UFDB-7 nach Preis ab 0.32 EUR bis 2.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN1025UFDB-7 | Diodes Incorporated |
 MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W |
auf Bestellung 1510 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN1025UFDB-7 |
|
Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W
MOSFETs Dual N-Ch Enh FET 12V 10Vgs 1.7W
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.28 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.32 EUR |