DMN1029UFDB-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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Technische Details DMN1029UFDB-13 Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DMN1029UFDB-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN1029UFDB-13 | Hersteller : Diodes Incorporated |
MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC |
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| DMN1029UFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Polarisation: unipolar Pulsed drain current: 20A Drain-source voltage: 12V Drain current: 5.8A Gate charge: 19.6nC On-state resistance: 65mΩ Power dissipation: 2.2W Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of channel: enhancement |
Produkt ist nicht verfügbar |