DMN1029UFDB-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.18 EUR |
| 20000+ | 0.17 EUR |
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Technische Details DMN1029UFDB-13 Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
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