DMN1033UCB4-7 Diodes Incorporated
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Technische Details DMN1033UCB4-7 Diodes Incorporated
Description: MOSFET 2N-CH U-WLB1818-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.45W, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: U-WLB1818-4.
Weitere Produktangebote DMN1033UCB4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN1033UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH U-WLB1818-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: U-WLB1818-4 |
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