DMN1054UCB4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
auf Bestellung 765000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.35 EUR |
| 15000+ | 0.34 EUR |
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Technische Details DMN1054UCB4-7 Diodes Incorporated
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: X1-WLB0808-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V.
Weitere Produktangebote DMN1054UCB4-7 nach Preis ab 0.46 EUR bis 1.48 EUR
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DMN1054UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X1-WLB0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V |
auf Bestellung 766558 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1054UCB4-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 8Vdss 5Vgss 15A |
auf Bestellung 5976 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1054UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Power dissipation: 1.34W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±5V Pulsed drain current: 8A Case: X1-WLB0808-4 Drain-source voltage: 8V Drain current: 3.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1054UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Power dissipation: 1.34W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±5V Pulsed drain current: 8A Case: X1-WLB0808-4 Drain-source voltage: 8V Drain current: 3.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |