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DMN10H099SFG-7

DMN10H099SFG-7 Diodes Incorporated

DMN10H099SFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN10H099SFG-7 Diodes Incorporated

Description: MOSFET N-CH 100V 4.2A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V, Power Dissipation (Max): 980mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V.

Weitere Produktangebote DMN10H099SFG-7 nach Preis ab 0.42 EUR bis 1.49 EUR

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DMN10H099SFG-7 DMN10H099SFG-7 Hersteller : Diodes Incorporated DMN10H099SFG.pdf Description: MOSFET N-CH 100V 4.2A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 11990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.60 EUR
1000+0.48 EUR
Mindestbestellmenge: 16
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DMN10H099SFG-7 DMN10H099SFG-7 Hersteller : Diodes Incorporated DMN10H099SFG.pdf MOSFETs 100V N-Ch Enh Mode 1127pF 25.2nC
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+0.97 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.46 EUR
2000+0.42 EUR
Mindestbestellmenge: 2
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DMN10H099SFG-7 Hersteller : DIODES INCORPORATED DMN10H099SFG.pdf DMN10H099SFG-7 SMD N channel transistors
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