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DMN10H099SK3-13

DMN10H099SK3-13 Diodes Incorporated

DMN10H099SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
5000+0.34 EUR
7500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN10H099SK3-13 Diodes Incorporated

Description: MOSFET N-CH 100V 17A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V.

Weitere Produktangebote DMN10H099SK3-13 nach Preis ab 0.36 EUR bis 1.25 EUR

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DMN10H099SK3-13 DMN10H099SK3-13 Hersteller : Diodes Incorporated DMN10H099SK3.pdf MOSFETs 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.02 EUR
10+0.89 EUR
100+0.61 EUR
500+0.51 EUR
1000+0.43 EUR
2500+0.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H099SK3-13 DMN10H099SK3-13 Hersteller : Diodes Incorporated DMN10H099SK3.pdf Description: MOSFET N-CH 100V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 71708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 15
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DMN10H099SK3-13 Hersteller : DIODES INCORPORATED DMN10H099SK3.pdf DMN10H099SK3-13 SMD N channel transistors
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