DMN10H099SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
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Technische Details DMN10H099SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 17A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V.
Weitere Produktangebote DMN10H099SK3-13 nach Preis ab 0.37 EUR bis 1 EUR
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DMN10H099SK3-13 | Hersteller : Diodes Incorporated |
MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC |
auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 17A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V |
auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN10H099SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H099SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
Produkt ist nicht verfügbar |