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DMN10H100SK3-13

DMN10H100SK3-13 Diodes Incorporated

DMN10H100SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.46 EUR
5000+ 0.44 EUR
12500+ 0.4 EUR
Mindestbestellmenge: 2500
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Technische Details DMN10H100SK3-13 Diodes Incorporated

Description: MOSFET N-CH 100V 18A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V.

Weitere Produktangebote DMN10H100SK3-13 nach Preis ab 0.43 EUR bis 1.24 EUR

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DMN10H100SK3-13 DMN10H100SK3-13 Hersteller : Diodes Incorporated DMN10H100SK3.pdf Description: MOSFET N-CH 100V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 49728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.21 EUR
17+ 1.05 EUR
100+ 0.73 EUR
500+ 0.61 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 15
DMN10H100SK3-13 DMN10H100SK3-13 Hersteller : Diodes Incorporated DMN10H100SK3.pdf MOSFET 100V N-Ch Enh FET 100mOhm 3V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.24 EUR
10+ 1.07 EUR
100+ 0.74 EUR
500+ 0.62 EUR
1000+ 0.53 EUR
2500+ 0.43 EUR
Mindestbestellmenge: 3
DMN10H100SK3-13 DMN10H100SK3-13 Hersteller : Diodes Inc 2974dmn10h100sk3.pdf Trans MOSFET N-CH 100V 18A 3-Pin(2+Tab) DPAK T/R
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DMN10H100SK3-13 Hersteller : DIODES INCORPORATED DMN10H100SK3.pdf DMN10H100SK3-13 SMD N channel transistors
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