DMN10H120SE-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 12500+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
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Technische Details DMN10H120SE-13 Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN10H120SE-13 nach Preis ab 0.38 EUR bis 1 EUR
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DMN10H120SE-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 3.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
auf Bestellung 905640 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN10H120SE-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 905640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.38 EUR |