DMN10H120SFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.44 EUR |
| 4000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
| 14000+ | 0.35 EUR |
| 20000+ | 0.34 EUR |
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Technische Details DMN10H120SFG-7 Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V.
Weitere Produktangebote DMN10H120SFG-7 nach Preis ab 0.37 EUR bis 1.67 EUR
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DMN10H120SFG-7 | Diodes Incorporated |
MOSFETs FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF |
auf Bestellung 2772 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 3.8A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
auf Bestellung 40601 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN10H120SFG-7 |
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Hersteller: Diodes Incorporated
MOSFETs FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
MOSFETs FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
auf Bestellung 2772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.3 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
| 2000+ | 0.37 EUR |
| DMN10H120SFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 40601 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 17+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |