DMN10H170SFDE-13 Diodes Incorporated

Description: MOSFET N-CH 100V 2.9A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN2020-6 (Type E), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 660mW (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).