DMN10H170SFG-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 15000+ | 0.28 EUR |
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Technische Details DMN10H170SFG-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc), Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V.
Weitere Produktangebote DMN10H170SFG-13 nach Preis ab 0.29 EUR bis 0.92 EUR
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DMN10H170SFG-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss |
auf Bestellung 9942 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V |
auf Bestellung 26900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN10H170SFG-13 |
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Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss
auf Bestellung 9942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.29 EUR |
| DMN10H170SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Description: MOSFET N-CH 100V PWRDI3333
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 26900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 23+ | 0.78 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.58 EUR |
| 250+ | 0.54 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.35 EUR |