DMN10H170SFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 15000+ | 0.28 EUR |
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Technische Details DMN10H170SFG-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc), Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V.
Weitere Produktangebote DMN10H170SFG-13 nach Preis ab 0.26 EUR bis 0.92 EUR
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DMN10H170SFG-13 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss |
auf Bestellung 10178 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V |
auf Bestellung 26900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN10H170SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 100V On-state resistance: 0.133Ω Power dissipation: 1.3W Drain current: 2.7A Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H170SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 100V On-state resistance: 0.133Ω Power dissipation: 1.3W Drain current: 2.7A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |