Produkte > DIODES INCORPORATED > DMN10H170SK3-13
DMN10H170SK3-13

DMN10H170SK3-13 Diodes Incorporated

DMN10H170SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.32 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN10H170SK3-13 Diodes Incorporated

Description: MOSFET N-CH 100V 12A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V.

Weitere Produktangebote DMN10H170SK3-13 nach Preis ab 0.32 EUR bis 0.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN10H170SK3-13 DMN10H170SK3-13 Hersteller : Diodes Incorporated DMN10H170SK3.pdf Description: MOSFET N-CH 100V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
auf Bestellung 190476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.6 EUR
100+ 0.41 EUR
500+ 0.35 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 26
DMN10H170SK3-13 DMN10H170SK3-13 Hersteller : Diodes Incorporated DIOD_S_A0001166602_1-2541915.pdf MOSFET 100V N-CH MOSFET 100V 12A
auf Bestellung 39906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.93 EUR
10+ 0.82 EUR
100+ 0.63 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
2500+ 0.36 EUR
Mindestbestellmenge: 4
DMN10H170SK3-13 Hersteller : DIODES INCORPORATED DMN10H170SK3.pdf DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar