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DMN10H170SVTQ-7

DMN10H170SVTQ-7 Diodes Incorporated

DMN10H170SVTQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
auf Bestellung 390000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.30 EUR
9000+0.29 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN10H170SVTQ-7 Diodes Incorporated

Description: MOSFET N-CH 100V 2.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V.

Weitere Produktangebote DMN10H170SVTQ-7 nach Preis ab 0.32 EUR bis 0.97 EUR

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DMN10H170SVTQ-7 DMN10H170SVTQ-7 Hersteller : Diodes Incorporated DMN10H170SVTQ.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
auf Bestellung 390437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.80 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H170SVTQ-7 DMN10H170SVTQ-7 Hersteller : Diodes Incorporated DIOD_S_A0002833563_1-2542112.pdf MOSFETs 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
auf Bestellung 2289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.97 EUR
10+0.82 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.38 EUR
3000+0.32 EUR
Mindestbestellmenge: 3
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DMN10H170SVTQ-7 Hersteller : DIODES INCORPORATED DMN10H170SVTQ.pdf DMN10H170SVTQ-7 SMD N channel transistors
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