DMN10H220LDV-13 Diodes Incorporated

Description: MOSFET 2N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V, Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).