DMN10H220LDV-13 Diodes Incorporated
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.23 EUR |
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Technische Details DMN10H220LDV-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V, Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Weitere Produktangebote DMN10H220LDV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN10H220LDV-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
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