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DMN11M1UCA14-7 Diodes Incorporated

DMN11M1UCA14.pdf Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3308pF @ 6V
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 77.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 870µA
Supplier Device Package: X4-DSN3027-14
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Technische Details DMN11M1UCA14-7 Diodes Incorporated

Description: IC, Packaging: Tape & Reel (TR), Package / Case: 14-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3308pF @ 6V, Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 77.7nC @ 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 870µA, Supplier Device Package: X4-DSN3027-14.