DMN1250UFEL-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.7 EUR |
| 6000+ | 0.65 EUR |
| 9000+ | 0.63 EUR |
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Technische Details DMN1250UFEL-7 Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515, Packaging: Tape & Reel (TR), Package / Case: 12-UFQFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 8 N-Channel, Common Gate, Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 660mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V, Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-QFN1515-12, Part Status: Active.
Weitere Produktangebote DMN1250UFEL-7 nach Preis ab 0.67 EUR bis 2.7 EUR
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DMN1250UFEL-7 | Diodes Incorporated |
MOSFETs 8 N-Ch FET 4.5V 280mOhm 12Vdss |
auf Bestellung 2556 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1250UFEL-7 | Diodes Incorporated |
Description: MOSFET 8N-CH 12V 2A U-QFN1515 Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Configuration: 8 N-Channel, Common Gate, Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-QFN1515-12 Part Status: Active |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1250UFEL-7 |
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Hersteller: Diodes Incorporated
MOSFETs 8 N-Ch FET 4.5V 280mOhm 12Vdss
MOSFETs 8 N-Ch FET 4.5V 280mOhm 12Vdss
auf Bestellung 2556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.8 EUR |
| 3000+ | 0.67 EUR |
| DMN1250UFEL-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |