DMN1250UFEL-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.58 EUR |
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Technische Details DMN1250UFEL-7 Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515, Packaging: Tape & Reel (TR), Package / Case: 12-UFQFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 8 N-Channel, Common Gate, Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 660mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V, Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-QFN1515-12, Part Status: Active.
Weitere Produktangebote DMN1250UFEL-7 nach Preis ab 0.62 EUR bis 2.03 EUR
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DMN1250UFEL-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 8N-CH 12V 2A U-QFN1515 Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Configuration: 8 N-Channel, Common Gate, Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-QFN1515-12 Part Status: Active |
auf Bestellung 7552 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1250UFEL-7 | Hersteller : Diodes Incorporated |
MOSFET 8 N-Ch FET 4.5V 280mOhm 12Vdss |
auf Bestellung 1947 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN1250UFEL-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 1.6A Drain-source voltage: 12V Gate charge: 1.9nC Case: U-QFN1515-12 Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.55Ω Pulsed drain current: 10A Type of transistor: N-MOSFET x8 Power dissipation: 1.25W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1250UFEL-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 1.6A Drain-source voltage: 12V Gate charge: 1.9nC Case: U-QFN1515-12 Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.55Ω Pulsed drain current: 10A Type of transistor: N-MOSFET x8 Power dissipation: 1.25W |
Produkt ist nicht verfügbar |