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DMN1250UFEL-7

DMN1250UFEL-7 Diodes Incorporated

DMN1250UFEL.pdf Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.55 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN1250UFEL-7 Diodes Incorporated

Description: MOSFET 8N-CH 12V 2A U-QFN1515, Packaging: Tape & Reel (TR), Package / Case: 12-UFQFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 8 N-Channel, Common Gate, Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 660mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V, Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-QFN1515-12, Part Status: Active.

Weitere Produktangebote DMN1250UFEL-7 nach Preis ab 0.55 EUR bis 2.27 EUR

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DMN1250UFEL-7 DMN1250UFEL-7 Hersteller : Diodes Incorporated DMN1250UFEL.pdf MOSFETs 8 N-Ch FET 4.5V 280mOhm 12Vdss
auf Bestellung 2836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.40 EUR
10+1.15 EUR
100+0.89 EUR
500+0.76 EUR
1000+0.62 EUR
3000+0.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN1250UFEL-7 DMN1250UFEL-7 Hersteller : Diodes Incorporated DMN1250UFEL.pdf Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMN1250UFEL-7 Hersteller : DIODES INCORPORATED DMN1250UFEL.pdf DMN1250UFEL-7 Multi channel transistors
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