Produkte > DIODES INCORPORATED > DMN13H750S-7
DMN13H750S-7

DMN13H750S-7 Diodes Incorporated

DMN13H750S.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN13H750S-7 Diodes Incorporated

Description: MOSFET N-CH 130V 1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V, Power Dissipation (Max): 770mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 130 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V.

Weitere Produktangebote DMN13H750S-7 nach Preis ab 0.48 EUR bis 1.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN13H750S-7 DMN13H750S-7 Hersteller : Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 14096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
100+ 0.78 EUR
500+ 0.62 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 18
DMN13H750S-7 DMN13H750S-7 Hersteller : Diodes Incorporated DMN13H750S.pdf MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss
auf Bestellung 3399 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
38+1.39 EUR
43+ 1.21 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.55 EUR
3000+ 0.5 EUR
Mindestbestellmenge: 38
DMN13H750S-7 DMN13H750S-7 Hersteller : Diodes Inc 2702838072119078dmn13h750s.pdf Trans MOSFET N-CH 130V 1A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
DMN13H750S-7 Hersteller : DIODES INCORPORATED DMN13H750S.pdf DMN13H750S-7 SMD N channel transistors
Produkt ist nicht verfügbar