DMN15H310SE-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 150V 2A/7.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
auf Bestellung 475000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.70 EUR |
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Technische Details DMN15H310SE-13 Diodes Incorporated
Description: MOSFET N-CH 150V 2A/7.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V.
Weitere Produktangebote DMN15H310SE-13 nach Preis ab 0.74 EUR bis 2.16 EUR
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DMN15H310SE-13 | Hersteller : Diodes Incorporated |
MOSFETs 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A |
auf Bestellung 1987 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 150V 2A/7.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V |
auf Bestellung 482282 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN15H310SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 150V Drain current: 1.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN15H310SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 150V Drain current: 1.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A |
Produkt ist nicht verfügbar |