DMN15H310SK3-13 Diodes Zetex
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.31 EUR |
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Technische Details DMN15H310SK3-13 Diodes Zetex
Description: MOSFET N-CH 150V 8.3A TO252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V, Power Dissipation (Max): 32W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN15H310SK3-13 nach Preis ab 0.41 EUR bis 1.45 EUR
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DMN15H310SK3-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 150V 8.3A TO252Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2402 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SK3-13 | Hersteller : Diodes Incorporated |
MOSFET 150V N-Ch Enh FET 310mOhm 10V 8.3A |
auf Bestellung 1508 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN15H310SK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R |
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DMN15H310SK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMN15H310SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN15H310SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 150V 8.3A TO252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMN15H310SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |