| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.84 EUR |
| 3000+ | 0.71 EUR |
| 6000+ | 0.69 EUR |
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Technische Details DMN16M9UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X3-DSN2718-6.
Weitere Produktangebote DMN16M9UCA6-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMN16M9UCA6-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH X3-DSN2718-6Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN16M9UCA6-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Description: MOSFET 2N-CH X3-DSN2718-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH