DMN2004DMK-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 0.54A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 225mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 310681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2004DMK-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 225mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 540mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active.
Weitere Produktangebote DMN2004DMK-7 nach Preis ab 0.19 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2004DMK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.54A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 225mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 310681 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMN2004DMK-7 | Hersteller : Diodes Incorporated |
MOSFET Dual N-Channel |
auf Bestellung 34311 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMN2004DMK-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
DMN2004DMK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
DMN2004DMK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |