DMN2004VK-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 1230000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
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Technische Details DMN2004VK-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 540mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMN2004VK-7 nach Preis ab 0.15 EUR bis 0.7 EUR
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DMN2004VK-7 | Hersteller : Diodes Incorporated |
 MOSFET 20V 540mA |
auf Bestellung 13852 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 1234767 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-563 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004VK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563 Case: SOT563 Mounting: SMD On-state resistance: 0.4Ω Kind of package: reel; tape Power dissipation: 0.25W Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET x2 Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN2004VK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563 Case: SOT563 Mounting: SMD On-state resistance: 0.4Ω Kind of package: reel; tape Power dissipation: 0.25W Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET x2 Polarisation: unipolar |
Produkt ist nicht verfügbar |