DMN2005DLP4K-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DMN2005DLP4K-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.3A 6DFN, Supplier Device Package: X2-DFN1310-6 (Type B), Vgs(th) (Max) @ Id: 900mV @ 100µA, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 300mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 400mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2005DLP4K-7 nach Preis ab 0.21 EUR bis 1.09 EUR
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DMN2005DLP4K-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.3A 6DFN Supplier Device Package: X2-DFN1310-6 (Type B) Vgs(th) (Max) @ Id: 900mV @ 100µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA Drain to Source Voltage (Vdss): 20V Power - Max: 400mW Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 25733 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005DLP4K-7 | Diodes Incorporated |
MOSFETs N-Channel |
auf Bestellung 18618 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2005DLP4K-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 25733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| DMN2005DLP4K-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Channel
MOSFETs N-Channel
auf Bestellung 18618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.09 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |