DMN2005LP4K-7-52 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 900mV @ 100µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2005LP4K-7-52 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 900mV @ 100µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Bulk.