DMN2005LPK-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
| Anzahl | Preis |
|---|---|
| 596+ | 0.12 EUR |
| 725+ | 0.099 EUR |
| 820+ | 0.087 EUR |
| 910+ | 0.079 EUR |
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Technische Details DMN2005LPK-7 DIODES INCORPORATED
Description: MOSFET N-CH 20V 440MA 3DFN, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Power Dissipation (Max): 450mW (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2005LPK-7 nach Preis ab 0.12 EUR bis 0.86 EUR
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DMN2005LPK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 440MA 3DFN Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 100µA Power Dissipation (Max): 450mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 440MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 45849 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Incorporated |
MOSFETs 20V 200mA |
auf Bestellung 5907 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2005LPK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 450mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 440MA 3DFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 450mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 21000+ | 0.12 EUR |
| DMN2005LPK-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 45849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 46+ | 0.38 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| DMN2005LPK-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 20V 200mA
MOSFETs 20V 200mA
auf Bestellung 5907 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |