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DMN2008LFU-13

DMN2008LFU-13 Diodes Inc


dmn2008lfu.pdf Hersteller: Diodes Inc
Trans MOSFET N-CH 20V 14.5A 6-Pin UDFN EP T/R
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Technische Details DMN2008LFU-13 Diodes Inc

Description: MOSFET 2NCH 20V 14.5A UDFN2030, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 14.5A, Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.

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DMN2008LFU-13 Hersteller : DIODES INCORPORATED DMN2008LFU.pdf DMN2008LFU-13 SMD N channel transistors
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DMN2008LFU-13 DMN2008LFU-13 Hersteller : Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2NCH 20V 14.5A UDFN2030
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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DMN2008LFU-13 DMN2008LFU-13 Hersteller : Diodes Incorporated DMN2008LFU.pdf MOSFET MOSFET BVDSS: 8V-24V
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