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DMN2008LFU-7

DMN2008LFU-7 Diodes Incorporated

DMN2008LFU.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
6000+ 0.36 EUR
9000+ 0.34 EUR
30000+ 0.33 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2008LFU-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 14.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 14.5A, Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250A, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.

Weitere Produktangebote DMN2008LFU-7 nach Preis ab 0.37 EUR bis 1.02 EUR

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DMN2008LFU-7 DMN2008LFU-7 Hersteller : Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 39887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
DMN2008LFU-7 DMN2008LFU-7 Hersteller : Diodes Incorporated DMN2008LFU.pdf MOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 9489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.02 EUR
10+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
3000+ 0.39 EUR
6000+ 0.37 EUR
Mindestbestellmenge: 3
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