Produkte > DIODES INCORPORATED > DMN2009LSS-13
DMN2009LSS-13

DMN2009LSS-13 Diodes Incorporated

DMN2009LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V
auf Bestellung 82500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.43 EUR
7500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2009LSS-13 Diodes Incorporated

Description: MOSFET N-CH 20V 12A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V.

Weitere Produktangebote DMN2009LSS-13 nach Preis ab 0.51 EUR bis 1.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN2009LSS-13 DMN2009LSS-13 Hersteller : Diodes Incorporated DMN2009LSS.pdf Description: MOSFET N-CH 20V 12A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V
auf Bestellung 84517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
18+1.03 EUR
100+0.69 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMN2009LSS-13 DMN2009LSS-13 Hersteller : Diodes Incorporated ds31409-89657.pdf MOSFET NMOS SINGLE N-CHANNL 20V 12A
auf Bestellung 5979 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMN2009LSS-13 Hersteller : DIODES INCORPORATED DMN2009LSS.pdf DMN2009LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH