DMN2009LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 12A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
| 7500+ | 0.36 EUR |
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Technische Details DMN2009LSS-13 Diodes Incorporated
Description: MOSFET N-CH 20V 12A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2009LSS-13 nach Preis ab 0.49 EUR bis 1.43 EUR
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DMN2009LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 12A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 44028 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2009LSS-13 | Diodes Incorporated |
MOSFET NMOS SINGLE N-CHANNL 20V 12A |
auf Bestellung 5979 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN2009LSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 12A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 12A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 44028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| DMN2009LSS-13 |
|
Hersteller: Diodes Incorporated
MOSFET NMOS SINGLE N-CHANNL 20V 12A
MOSFET NMOS SINGLE N-CHANNL 20V 12A
auf Bestellung 5979 Stücke:
Lieferzeit 10-14 Tag (e)