auf Bestellung 6594 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.33 EUR |
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Technische Details DMN2009USS-13 Diodes Incorporated
Description: MOSFET N-CH 20V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1706 pF @ 10 V.
Weitere Produktangebote DMN2009USS-13 nach Preis ab 0.42 EUR bis 1 EUR
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DMN2009USS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1706 pF @ 10 V |
auf Bestellung 1732 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2009USS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC |
Produkt ist nicht verfügbar |
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DMN2009USS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1706 pF @ 10 V |
Produkt ist nicht verfügbar |
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| DMN2009USS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC |
Produkt ist nicht verfügbar |