DMN2011UFDE-7 Diodes Incorporated
auf Bestellung 75295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.35 EUR |
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Technische Details DMN2011UFDE-7 Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 610mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V.
Weitere Produktangebote DMN2011UFDE-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMN2011UFDE-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 11.7A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V |
auf Bestellung 131560 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFDE-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 11.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2011UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2011UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |