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DMN2011UFDF-13

DMN2011UFDF-13 Diodes Incorporated

DMN2011UFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 14.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.24 EUR
Mindestbestellmenge: 10000
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Technische Details DMN2011UFDF-13 Diodes Incorporated

Description: MOSFET N-CH 20V 14.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V.

Weitere Produktangebote DMN2011UFDF-13 nach Preis ab 0.26 EUR bis 1.21 EUR

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DMN2011UFDF-13 DMN2011UFDF-13 Hersteller : Diodes Incorporated DMN2011UFDF.pdf Description: MOSFET N-CH 20V 14.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
auf Bestellung 13425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.30 EUR
5000+0.26 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFDF-13 Hersteller : DIODES INCORPORATED DMN2011UFDF.pdf DMN2011UFDF-13 SMD N channel transistors
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DMN2011UFDF-13 DMN2011UFDF-13 Hersteller : Diodes Incorporated diodes_inc_diod-s-a0002833311-1-1749041.pdf MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K
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