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DMN2011UFDF-7

DMN2011UFDF-7 Diodes Incorporated

DMN2011UFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 14.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2011UFDF-7 Diodes Incorporated

Description: MOSFET N-CH 20V 14.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V.

Weitere Produktangebote DMN2011UFDF-7 nach Preis ab 0.25 EUR bis 1.18 EUR

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Preis
DMN2011UFDF-7 DMN2011UFDF-7 Hersteller : Diodes Incorporated DIOD_S_A0009865555_1-2543447.pdf MOSFETs MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
auf Bestellung 3136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.92 EUR
10+0.62 EUR
100+0.42 EUR
500+0.36 EUR
1000+0.3 EUR
3000+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFDF-7 DMN2011UFDF-7 Hersteller : Diodes Incorporated DMN2011UFDF.pdf Description: MOSFET N-CH 20V 14.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
auf Bestellung 4133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
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DMN2011UFDF-7 Hersteller : DIODES INCORPORATED DMN2011UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 11.4A
Pulsed drain current: 80A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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