Produkte > DIODES INCORPORATED > DMN2011UFX-7
DMN2011UFX-7

DMN2011UFX-7 Diodes Incorporated

DMN2011UFX.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2011UFX-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Part Status: Active, Supplier Device Package: V-DFN2050-4, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 4-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMN2011UFX-7 nach Preis ab 0.43 EUR bis 1.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN2011UFX-7 DMN2011UFX-7 Diodes Incorporated DMN2011UFX.pdf MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
auf Bestellung 5919 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.5 EUR
10+1.01 EUR
100+0.7 EUR
500+0.61 EUR
1000+0.53 EUR
3000+0.43 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFX-7 DMN2011UFX-7 Diodes Incorporated DMN2011UFX.pdf Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
auf Bestellung 4797 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
15+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFX-7 DMN2011UFX.pdf
DMN2011UFX-7
Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
auf Bestellung 5919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.5 EUR
10+1.01 EUR
100+0.7 EUR
500+0.61 EUR
1000+0.53 EUR
3000+0.43 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFX-7 DMN2011UFX.pdf
DMN2011UFX-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
auf Bestellung 4797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
15+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH