DMN2011UFX-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DMN2011UFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Part Status: Active, Supplier Device Package: V-DFN2050-4, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 4-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2011UFX-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMN2011UFX-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 12.2A 4VDFN Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: V-DFN2050-4 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DMN2011UFX-7 | Diodes Incorporated |
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN2011UFX-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN2011UFX-7 |
|
Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN2011UFX-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH