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DMN2011UFX-7

DMN2011UFX-7 Diodes Incorporated

DMN2011UFX.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2011UFX-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Packaging: Tape & Reel (TR), Package / Case: 4-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: V-DFN2050-4, Part Status: Active.

Weitere Produktangebote DMN2011UFX-7 nach Preis ab 0.52 EUR bis 1.62 EUR

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DMN2011UFX-7 DMN2011UFX-7 Hersteller : Diodes Incorporated DMN2011UFX.pdf Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Cut Tape (CT)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
auf Bestellung 8657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
17+1.04 EUR
100+0.72 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFX-7 DMN2011UFX-7 Hersteller : Diodes Incorporated DMN2011UFX.pdf MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.62 EUR
10+1.09 EUR
100+0.76 EUR
500+0.65 EUR
1000+0.55 EUR
3000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMN2011UFX-7 Hersteller : DIODES INCORPORATED DMN2011UFX.pdf DMN2011UFX-7 SMD N channel transistors
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