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DMN2014LHAB-13

DMN2014LHAB-13 Diodes Incorporated


DMN2014LHAB.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.26 EUR
Mindestbestellmenge: 10000
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Technische Details DMN2014LHAB-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.

Weitere Produktangebote DMN2014LHAB-13 nach Preis ab 0.27 EUR bis 0.86 EUR

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Preis ohne MwSt
DMN2014LHAB-13 DMN2014LHAB-13 Hersteller : Diodes Incorporated DMN2014LHAB.pdf Description: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.73 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
2000+ 0.29 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 21
DMN2014LHAB-13 Hersteller : Diodes Incorporated DIOD_S_A0007229447_1-2512679.pdf MOSFET MOSFET BVDSS: 8V~24V U-DFN2030-6 T&R 10K
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