DMN2014LHAB-7 Diodes Incorporated
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.30 EUR |
| 9000+ | 0.28 EUR |
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Technische Details DMN2014LHAB-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9A, Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2014LHAB-7 nach Preis ab 0.36 EUR bis 1.30 EUR
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DMN2014LHAB-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 9A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
auf Bestellung 2023 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2014LHAB-7 | Hersteller : DIODES INCORPORATED |
DMN2014LHAB-7 SMD N channel transistors |
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DMN2014LHAB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |