DMN2014LHAB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
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Technische Details DMN2014LHAB-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9A, Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2014LHAB-7 nach Preis ab 0.32 EUR bis 1.23 EUR
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DMN2014LHAB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
auf Bestellung 110886 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-7 | Hersteller : Diodes Incorporated |
MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF |
auf Bestellung 2768 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN2014LHAB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.4A Pulsed drain current: 45A Power dissipation: 1.1W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2014LHAB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.4A Pulsed drain current: 45A Power dissipation: 1.1W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |