DMN2015UFDE-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2015UFDE-7 Diodes Incorporated
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 10.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.1V, euEccn: NLR, Verlustleistung: 660mW, Bauform - Transistor: U-DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 9300µohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote DMN2015UFDE-7 nach Preis ab 0.36 EUR bis 1.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN2015UFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) |
auf Bestellung 138015 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 9300µohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2015UFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 9300µohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2015UFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
auf Bestellung 140960 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
auf Bestellung 2385 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2015UFDE-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
auf Bestellung 138015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 27+ | 0.79 EUR |
| DMN2015UFDE-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 1.2 EUR |
| 299+ | 0.77 EUR |
| 451+ | 0.48 EUR |
| 547+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| DMN2015UFDE-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 1.2 EUR |
| 299+ | 0.77 EUR |
| 451+ | 0.48 EUR |
| 547+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| DMN2015UFDE-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 140960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| DMN2015UFDE-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.65 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |