Produkte > DIODES INCORPORATED > DMN2015UFDE-7
DMN2015UFDE-7

DMN2015UFDE-7 Diodes Incorporated

DMN2015UFDE.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.28 EUR
6000+0.26 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2015UFDE-7 Diodes Incorporated

Description: MOSFET N-CH 20V 10.5A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (Type E), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 660mW (Ta), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMN2015UFDE-7 nach Preis ab 0.31 EUR bis 1.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated DMN2015UFDE.pdf Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
auf Bestellung 138015 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
27+0.66 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated DMN2015UFDE.pdf Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 140960 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
22+0.81 EUR
100+0.53 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated DMN2015UFDE.pdf MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.39 EUR
10+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2015UFDE-7 DMN2015UFDE.pdf
DMN2015UFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
auf Bestellung 138015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+0.99 EUR
27+0.66 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2015UFDE-7 DMN2015UFDE.pdf
DMN2015UFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 140960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.3 EUR
22+0.81 EUR
100+0.53 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2015UFDE-7 DMN2015UFDE.pdf
DMN2015UFDE-7
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.39 EUR
10+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH