| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2015UFDF-7 Diodes Incorporated
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 11.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Gate-Source-Schwellenspannung, max.: 1.2V, Verlustleistung: 1.8W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: U-DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 6800µohm.
Weitere Produktangebote DMN2015UFDF-7 nach Preis ab 0.23 EUR bis 1.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMN2015UFDF-7 | DIODES INC. |
 Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 1.2V Verlustleistung: 1.8W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 6800µohm |
auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2015UFDF-7 | DIODES INC. |
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.2V Verlustleistung: 1.8W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 6800µohm |
auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2015UFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 15.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V |
auf Bestellung 192000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2015UFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 15.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V |
auf Bestellung 194767 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2015UFDF-7 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6800µohm
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6800µohm
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 156+ | 1.61 EUR |
| 249+ | 0.93 EUR |
| 387+ | 0.56 EUR |
| 553+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| DMN2015UFDF-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6800µohm
Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 6800µohm
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 156+ | 1.61 EUR |
| 249+ | 0.93 EUR |
| 387+ | 0.56 EUR |
| 553+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| DMN2015UFDF-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 15.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
Description: MOSFET N-CH 20V 15.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
auf Bestellung 192000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
| 15000+ | 0.24 EUR |
| 21000+ | 0.23 EUR |
| DMN2015UFDF-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 15.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
Description: MOSFET N-CH 20V 15.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V
auf Bestellung 194767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 27+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |