DMN2016LHAB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2016LHAB-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V, Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B).
Weitere Produktangebote DMN2016LHAB-7 nach Preis ab 0.4 EUR bis 1.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2016LHAB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMN2016LHAB-7 | Hersteller : Diodes Incorporated |
MOSFET DUAL N-CH MOSFET 20V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||
| DMN2016LHAB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6 Case: U-DFN2030-6 Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 45A Power dissipation: 1W Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 6A Kind of package: reel; tape Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| DMN2016LHAB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6 Case: U-DFN2030-6 Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 45A Power dissipation: 1W Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 6A Kind of package: reel; tape Drain-source voltage: 20V |
Produkt ist nicht verfügbar |