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DMN2016UTS-13 Diodes Incorporated


ds31995.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8.58A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.58A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 115000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.28 EUR
7500+0.27 EUR
12500+0.26 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2016UTS-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 8.58A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8.58A, Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP.

Weitere Produktangebote DMN2016UTS-13 nach Preis ab 0.27 EUR bis 1.3 EUR

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DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated ds31995.pdf Description: MOSFET 2N-CH 20V 8.58A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.58A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 117727 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
22+0.83 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated ds31995.pdf MOSFETs N-Ch Dual MOSFET 20V VDSS 8V VGSS
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.3 EUR
10+0.84 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.3 EUR
2500+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2016UTS-13 ds31995.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8.58A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.58A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 117727 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.28 EUR
22+0.83 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2016UTS-13 ds31995.pdf
Hersteller: Diodes Incorporated
MOSFETs N-Ch Dual MOSFET 20V VDSS 8V VGSS
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.3 EUR
10+0.84 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.3 EUR
2500+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH