DMN2023UCB4-7 Diodes Incorporated
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.44 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.39 EUR |
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Technische Details DMN2023UCB4-7 Diodes Incorporated
Description: MOSFET 2N-CH 24V 6A X1-WLB1818-4, Packaging: Cut Tape (CT), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.45W, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X1-WLB1818-4, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2023UCB4-7 nach Preis ab 0.27 EUR bis 1.53 EUR
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 24V 6A X1-WLB1818-4Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
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| DMN2023UCB4-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 6A X1-WLB1818-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 6A X1-WLB1818-4 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 |
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| DMN2023UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Gate charge: 37nC On-state resistance: 40mΩ Power dissipation: 1.45W Drain current: 4.8A Gate-source voltage: ±12V Drain-source voltage: 24V Pulsed drain current: 20A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |