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DMN2024UTS-13

DMN2024UTS-13 Diodes Incorporated

DMN2024UTS.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.27 EUR
5000+ 0.26 EUR
12500+ 0.24 EUR
Mindestbestellmenge: 2500
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Technische Details DMN2024UTS-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 6.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 890mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 8-TSSOP.

Weitere Produktangebote DMN2024UTS-13 nach Preis ab 0.22 EUR bis 0.83 EUR

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DMN2024UTS-13 DMN2024UTS-13 Hersteller : Diodes Incorporated DMN2024UTS.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.7 EUR
100+ 0.48 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
DMN2024UTS-13 DMN2024UTS-13 Hersteller : Diodes Incorporated DIOD_S_A0010315301_1-2543420.pdf MOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.83 EUR
10+ 0.71 EUR
100+ 0.53 EUR
500+ 0.42 EUR
1000+ 0.32 EUR
2500+ 0.27 EUR
10000+ 0.24 EUR
Mindestbestellmenge: 4
DMN2024UTS-13 Hersteller : Diodes Zetex DMN2024UTS.pdf High Enhancement Mode MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.22 EUR
Mindestbestellmenge: 2500