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DMN2024UTS-13

DMN2024UTS-13 Diodes Incorporated

DMN2024UTS.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 87500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.24 EUR
5000+0.23 EUR
12500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2024UTS-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 6.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 890mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 8-TSSOP.

Weitere Produktangebote DMN2024UTS-13 nach Preis ab 0.21 EUR bis 1.07 EUR

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DMN2024UTS-13 DMN2024UTS-13 Hersteller : Diodes Incorporated DIOD_S_A0010315301_1-2543420.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 2405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.80 EUR
10+0.69 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.30 EUR
2500+0.25 EUR
10000+0.24 EUR
Mindestbestellmenge: 4
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DMN2024UTS-13 DMN2024UTS-13 Hersteller : Diodes Incorporated DMN2024UTS.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 89867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
25+0.71 EUR
100+0.46 EUR
500+0.37 EUR
1000+0.34 EUR
Mindestbestellmenge: 17
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DMN2024UTS-13 Hersteller : Diodes Zetex DMN2024UTS.pdf High Enhancement Mode MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH