auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
Produktrezensionen
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Technische Details DMN2026UVT-7 Diodes Zetex
Description: MOSFET N-CH 20V 6.2A TSOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.15W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V.
Weitere Produktangebote DMN2026UVT-7 nach Preis ab 0.17 EUR bis 0.77 EUR
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DMN2026UVT-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 6.2A TSOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2026UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A TSOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2026UVT-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 20A |
auf Bestellung 2889 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2026UVT-7 | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode Mosfet |
Produkt ist nicht verfügbar |
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DMN2026UVT-7 | Hersteller : Diodes Inc |
N-Channel Enhancement Mode Mosfet |
Produkt ist nicht verfügbar |
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DMN2026UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMN2026UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |