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Technische Details DMN2027UPS-13 Diodes Zetex
Description: MOSFET N-CH 20V 10A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V.
Weitere Produktangebote DMN2027UPS-13 nach Preis ab 0.3 EUR bis 2 EUR
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DMN2027UPS-13 | Diodes Zetex |
 N Channel MOSFET |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2027UPS-13 | Diodes Zetex |
N Channel MOSFET |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2027UPS-13 | Diodes Zetex |
N Channel MOSFET |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2027UPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2027UPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V |
auf Bestellung 12450 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2027UPS-13 | Diodes Incorporated |
MOSFETs 8V to 24V FET Access Point Min RDSon |
auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2027UPS-13 |
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Hersteller: Diodes Zetex
N Channel MOSFET
N Channel MOSFET
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.39 EUR |
| 7500+ | 0.36 EUR |
| 15000+ | 0.32 EUR |
| 22500+ | 0.3 EUR |
| DMN2027UPS-13 |
|
Hersteller: Diodes Zetex
N Channel MOSFET
N Channel MOSFET
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.4 EUR |
| 5000+ | 0.37 EUR |
| 10000+ | 0.35 EUR |
| 12500+ | 0.32 EUR |
| 25000+ | 0.3 EUR |
| DMN2027UPS-13 |
|
Hersteller: Diodes Zetex
N Channel MOSFET
N Channel MOSFET
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
| 12500+ | 0.33 EUR |
| 25000+ | 0.32 EUR |
| DMN2027UPS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.44 EUR |
| 5000+ | 0.42 EUR |
| DMN2027UPS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
Description: MOSFET N-CH 20V 10A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V
auf Bestellung 12450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| DMN2027UPS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 8V to 24V FET Access Point Min RDSon
MOSFETs 8V to 24V FET Access Point Min RDSon
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 2500+ | 0.49 EUR |
| 5000+ | 0.43 EUR |