auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.32 EUR |
Produktrezensionen
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Technische Details DMN2027UPS-13 Diodes Zetex
Description: MOSFET N-CH 20V 10A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V.
Weitere Produktangebote DMN2027UPS-13 nach Preis ab 0.25 EUR bis 1.05 EUR
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DMN2027UPS-13 | Hersteller : Diodes Zetex |
 N Channel MOSFET |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2027UPS-13 | Hersteller : Diodes Zetex |
N Channel MOSFET |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2027UPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 10A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2027UPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 10A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 10 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2027UPS-13 | Hersteller : Diodes Incorporated |
MOSFET 8V to 24V FET Access Point Min RDSon |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2027UPS-13 | Hersteller : Diodes Inc |
N Channel MOSFET |
Produkt ist nicht verfügbar |
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| DMN2027UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 60A; 1.9W Gate charge: 11.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN2027UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 60A; 1.9W Gate charge: 11.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |