auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
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Technische Details DMN2028UFDH-7 Diodes Zetex
Description: MOSFET 2N-CH 20V 6.8A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.8A, Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3030-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2028UFDH-7 nach Preis ab 0.19 EUR bis 1.04 EUR
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DMN2028UFDH-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 6.8A POWERDIPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3030-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2028UFDH-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.8A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3030-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2028UFDH-7 | Hersteller : Diodes Incorporated |
MOSFETs DUAL N-CH MOSFET 20V |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2028UFDH-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 6.8A 8-Pin PowerDI T/R |
Produkt ist nicht verfügbar |
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DMN2028UFDH-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 6.8A 8-Pin PowerDI T/R |
Produkt ist nicht verfügbar |
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| DMN2028UFDH-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7A Pulsed drain current: 40A Power dissipation: 1.5W Case: V-DFN3030-8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2028UFDH-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7A Pulsed drain current: 40A Power dissipation: 1.5W Case: V-DFN3030-8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |