DMN2028UFU-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| 15000+ | 0.22 EUR |
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Technische Details DMN2028UFU-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V, Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2028UFU-7 nach Preis ab 0.22 EUR bis 1.14 EUR
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DMN2028UFU-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 20Vdss 10Vgss 40A |
auf Bestellung 2698 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2028UFU-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
auf Bestellung 17473 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2028UFU-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 20Vdss 10Vgss 40A
MOSFETs N-Ch Enh Mode FET 20Vdss 10Vgss 40A
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.22 EUR |
| DMN2028UFU-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Description: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 17473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |