DMN2028USS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 7500+ | 0.28 EUR |
| 12500+ | 0.26 EUR |
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Technische Details DMN2028USS-13 Diodes Incorporated
Description: MOSFET N-CH 20V 7.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Weitere Produktangebote DMN2028USS-13 nach Preis ab 0.29 EUR bis 0.88 EUR
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DMN2028USS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K |
auf Bestellung 4048 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2028USS-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 7.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 23375 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2028USS-13 | Diodes |
MOSFET N-CH 20V 7.3A SOIC-8 Транзистори |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2028USS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
auf Bestellung 4048 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.29 EUR |
| DMN2028USS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 23375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.33 EUR |
| DMN2028USS-13 |
|
Hersteller: Diodes
MOSFET N-CH 20V 7.3A SOIC-8 Транзистори
MOSFET N-CH 20V 7.3A SOIC-8 Транзистори
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.88 EUR |