DMN2030UCA4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 6.3A 4DSN
Packaging: Bulk
Package / Case: 4-XFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 160µA
Supplier Device Package: X4-DSN1111-4
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Technische Details DMN2030UCA4-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.3A 4DSN, Packaging: Bulk, Package / Case: 4-XFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V, Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 160µA, Supplier Device Package: X4-DSN1111-4.
Weitere Produktangebote DMN2030UCA4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN2030UCA4-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X4-DSN1111-4 T&R 3K |
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